IR2131 |
RFQ for IR2131 Required Field |
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| Technical/Catalog Information | IR2131 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Configuration | High and Low Side |
| Voltage - Supply | 10 V ~ 20 V |
| Current - Peak | 250mA |
| Delay Time | 1.3s |
| Package / Case | 28-DIP (600 mil) |
| Packaging | Tube |
| Number of Outputs | 3 |
| Input Type | Inverting |
| Number of Configurations | 1 |
| Operating Temperature | -40°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | 600V |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IR2131 IR2131 |
| Product | Manufacturers | Pack | D/C |
| IR2131 | - | - | 2002 |
The IR2131 is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with 5V CMOS or LSTTL outputs. A current trip function which terminates all six outputs can be derived from an external current sense resistor. A shutdown input is provided for a customized shutdown function. An open drain FAULT signal is provided to indicate that any of the shutdowns has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.
Features |
| ·Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune·Gate drive supply range from 10 to 20V·Undervoltage lockout for all channels·Over-current shutdown turns off all six drivers·Independent 3 high side & 3 low side drivers·Matched propagation delay for all channels·Outputs out of phase with inputs |
| Definition | Parameter | Value | Units | ||
| Definition | Min. | Max. | |||
| VB1,2,3 | High Side Floating Supply Voltage | -0.3 | 525 | V | |
| VS1,2,3 | High Side Floating Offset Voltage | VB1,2,3 - 25 | VB1,2,3 + 0.3 | ||
| VHO1,2,3 | High Side Floating Output Voltage | VS1,2,3 - 0.3 |
VB1,2,3 + 0.3 | ||
| VCC | Low Side and Logic Fixed Supply Voltage | -0.3 | 25 | ||
| VSS | Logic Ground | VCC - 25 | VCC + 0.3 | ||
| VLO1,2,3 | Low Side Output Voltage | -0.3 | VCC + 0.3 | ||
| VIN | Logic Input Voltage (HIN1,2,3 ,LIN1,2,3 ,FLT -CLR, SD & ITRIP) | VSS - 0.3 | VCC + 0.3 | ||
| VFLT | FAULT Output Voltage | VSS - 0.3 | VCC + 0.3 | ||
| dVS/dt | Allowable Offset Supply Voltage Transient | - | 50 | V/ns | |
| PD | Package Power Dissipation @ TA +25 | (28 Lead DIP) | - | 1.5 | W |
| (28 Lead SOIC) | - | 1.6 | |||
| (44 Lead PLCC) | - | 2.0 | |||
| RJA | Thermal Resistance, Junction to Ambient |
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